Analysis of Ultrahigh Apparent Mobility in Oxide Field‐Effect Transistors-Reference-Cited by-同舟云学术

Analysis of Ultrahigh Apparent Mobility in Oxide Field‐Effect Transistors

Published:2019-01-25 Issue:7 Volume:6 Page:1801189
ISSN:2198-3844
Container-title:Advanced Science
language:en
Short-container-title:Adv. Sci.

Author:

Chen Changdong¹,Yang Bo‐Ru¹,Li Gongtan¹,Zhou Hang²,Huang Bolong³⁴,Wu Qian¹,Zhan Runze¹,Noh Yong‐Young⁵,Minari Takeo⁶,Zhang Shengdong²,Deng Shaozhi¹,Sirringhaus Henning⁷,Liu Chuan¹^ORCID

Affiliation:

1. State Key Lab of Opto‐Electronic Materials & Technologies, Guangdong Province Key Lab of Display Material and Technology, School of Electronics and Information Technology, Shunde International Joint Research InstituteSun Yat‐Sen University Guangdong 510275 China

2. Shenzhen Key Lab of Thin Film Transistor and Advanced Display, Peking University Shenzhen Graduate SchoolPeking University Shenzhen 518055 China

3. Department of Applied Biology and Chemical TechnologyThe Hong Kong Polytechnic University Hung Hom Kowloon Hong Kong SAR

4. The Hong Kong Polytechnic University Shenzhen Research Institute Shenzhen 518057 China

5. Department of Energy and Materials EngineeringDongguk University 30 Pildong‐ro, 1 gil, Jung‐gu Seoul 04620 Republic of Korea

6. International Center for Materials Nanoarchitectonics (WPI‐MANA)National Institute for Materials Science (NIMS) Tsukuba Ibaraki 305‐0044 Japan

7. Department of PhysicsUniversity of Cambridge Cambridge CB3 1HK UK

Funder

National Natural Science Foundation of China

Research Grants Council, University Grants Committee

Publisher

Wiley

Subject

General Physics and Astronomy,General Engineering,Biochemistry, Genetics and Molecular Biology (miscellaneous),General Materials Science,General Chemical Engineering,Medicine (miscellaneous)

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/advs.201801189

Reference54 articles.

1. High-Performance Zinc Oxide Transistors and Circuits Fabricated by Spray Pyrolysis in Ambient Atmosphere

2. Recyclable, Flexible, Low-Power Oxide Electronics

3. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

4. Transparent Electronics

5. Role of Gallium Doping in Dramatically Lowering Amorphous-Oxide Processing Temperatures for Solution-Derived Indium Zinc Oxide Thin-Film Transistors

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