The roles of shallow and deep levels in the recombination behavior of polycrystalline silicon on glass solar cells-Reference-Cited by-同舟云学术

The roles of shallow and deep levels in the recombination behavior of polycrystalline silicon on glass solar cells

Published:2011-07-22 Issue:8 Volume:20 Page:915-922
ISSN:1062-7995
Container-title:Progress in Photovoltaics: Research and Applications
language:en
Short-container-title:Prog. Photovolt: Res. Appl.

Author:

Wong Johnson¹,Huang Jialiang¹,Varlamov Sergey¹,Green Martin A.¹,Keevers Mark²

Affiliation:

1. Photovoltaics Centre of Excellence; The University of New South Wales; Sydney NSW 2052 Australia

2. CSG Solar Pty Ltd; Botany NSW 2019 Australia

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pip.1154/fullpdf

Reference21 articles.

1. Structural inhomogeneities in polycrystalline silicon on glass solar cells and their effects on device characteristics;Wong;Progress in Photovoltaics: Research and Applications,2011

2. Lifetime limiting recombination pathway in thin-film polycrystalline silicon on glass solar cells;Wong;Journal of Applied Physics,2010

3. Anomalous temperature dependence of diode saturation currents in polycrystalline silicon thin-film solar cells on glass;Wong;Journal of Applied Physics,2009

4. Analysis of recombination centers in epitaxial silicon thin-film solar cells by temperature-dependent quantum efficiency measurements;Wagner;Applied Physics Letters,2003

5. Electroluminescence from p-i-n structure fabricated using crystalline silicon on glass technology;Mchedlidze;Journal of Applied Physics,2009

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