Analysis of recombination centers in epitaxial silicon thin-film solar cells by temperature-dependent quantum efficiency measurements
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1566481
Reference13 articles.
1. Quantum efficiency analysis of thin-layer silicon solar cells with back surface fields and optical confinement
2. Noncontact minority‐carrier lifetime measurement at elevated temperatures for metal‐doped Czochralski silicon crystals
3. Noncontact energy level analysis of metallic impurities in silicon crystals
4. Lifetime spectroscopy for defect characterization: Systematic analysis of the possibilities and restrictions
5. Electron-Hole Recombination in Germanium
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1. Generalized quantum efficiency analysis for non-ideal solar cells: Case of Cu2ZnSnSe4;Journal of Applied Physics;2016-01-07
2. DLTS of p-type Czochralski Si wafers containing processing-induced macropores;Semiconductor Science and Technology;2011-12-09
3. The roles of shallow and deep levels in the recombination behavior of polycrystalline silicon on glass solar cells;Progress in Photovoltaics: Research and Applications;2011-07-22
4. Temperature-dependent quantum efficiency analysis of graded-gap Cu(In,Ga)Se2 solar cells;Solar Energy Materials and Solar Cells;2011-07
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