Grain boundary light beam induced current: A characterization of bonded silicon wafers and polycrystalline silicon thin films for diffusion length extraction-Reference-Cited by-同舟云学术

Grain boundary light beam induced current: A characterization of bonded silicon wafers and polycrystalline silicon thin films for diffusion length extraction

Published:2016-04-13 Issue:7 Volume:213 Page:1728-1737
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Gref Orman¹,Teodoreanu Ana-Maria¹,Leihkauf Rainer¹,Lohrke Heiko¹,Kittler Martin²,Amkreutz Daniel³,Boit Christian¹,Friedrich Felice¹

Affiliation:

1. Department of Semiconductor Devices; Technische Universität Berlin; Sekr. E4, Einsteinufer 19 10587 Berlin Germany

2. Institut für Physik und Chemie; BTU Cottbus-Senftenberg; Platz der Deutschen Einheit 1 03046 Cottbus Germany

3. Institut für Silizium-Photovoltaik; Helmholtz-Zentrum Berlin für Materialien und Energie; Kekuléstr. 5 12489 Berlin Germany

Funder

Federal Ministry for Economic Affairs and Energy

Bundesministerium fur Wirtschaft und Technologie

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

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4. Towards monocrystalline silicon thin films grown on glass by liquid phase crystallization

5. Grain boundaries in semiconductors

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