Temperature dependence of strain–phonon coefficient in epitaxial Ge/Si(001): A comprehensive analysis-Reference-Cited by-同舟云学术

Temperature dependence of strain–phonon coefficient in epitaxial Ge/Si(001): A comprehensive analysis

Published:2020-02-26 Issue:6 Volume:51 Page:989-996
ISSN:0377-0486
Container-title:Journal of Raman Spectroscopy
language:en
Short-container-title:J Raman Spectrosc

Author:

Manganelli C.L.¹^ORCID,Virgilio M.²,Skibitzki O.¹,Salvalaglio M.¹³⁴,Spirito D.¹^ORCID,Zaumseil P.¹,Yamamoto Y.¹,Montanari M.⁵,Klesse W.M.¹,Capellini G.¹⁵

Affiliation:

1. IHP–Leibniz‐Institut für innovative Mikroelektronik, Material Research‐Semiconductor Optoelectronics Frankfurt (Oder) Germany

2. Dipartimento di Fisica Università di Pisa Pisa Italy

3. Institut für Wissenschaftliches Rechnen Technische Universität Dresden Dresden Germany

4. Dresden Center for Computational Material Science Technische Universität Dresden Dresden Germany

5. Dipartimento di Scienze Università degli Studi Roma Tre Roma Italy

Funder

Horizon 2020 Framework Programme

Publisher

Wiley

Subject

Spectroscopy,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/jrs.5860

Reference47 articles.

1. Recent progress in lasers on silicon

2. The Past, Present, and Future of Silicon Photonics

3. High-performance Ge-on-Si photodetectors

4. Ge-on-Si laser operating at room temperature

5. An electrically pumped germanium laser

Cited by 21 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Selective Epitaxy of Germanium on silicon for the fabrication of CMOS compatible short-wavelength infrared photodetectors;Materials Science in Semiconductor Processing;2024-06

2. Strain-dependent grain boundary properties of n-type germanium layers;Scientific Reports;2024-04-03

3. Raman scattering evolution in temperature-induced ferroelectric phase transition of few-layer NbOCl2;Applied Physics Letters;2024-03-11

4. Thermal expansion and temperature dependence of Raman modes in epitaxial layers of Ge and Ge1−xSnx;Physical Review Materials;2024-02-01

5. High-quality CMOS compatible n-type SiGe parabolic quantum wells for intersubband photonics at 2.5–5 THz;Nanophotonics;2024-01-15