Raman scattering evolution in temperature-induced ferroelectric phase transition of few-layer NbOCl2

Author:

Huang Muyang1ORCID,Chen Wei1,Luo Siwei1,Huang Zongyu1ORCID,Wang Ziyu2ORCID,Qi Xiang1ORCID

Affiliation:

1. Hunan Key Laboratory for Micro-Nano Energy Materials and Devices, School of Physics and Optoelectronic, Xiangtan University 1 , Hunan 411105, China

2. Suzhou Institute of Wuhan University 2 , Suzhou 215125, China

Abstract

NbOCl2 is an emerging layered ferroelectric (FE) material with unique photoelectric properties. However, the phonons and thermal properties of NbOCl2 have remained elusive. Here, we report measurements of Raman and second harmonic generation spectrum of NbOCl2 flakes as a function of temperature (80–500 K). All observed Raman modes exhibit temperature-dependent shift. The first-order temperature coefficients of P1, P2, P3, P4, and P5 modes are 0.001 58, −0.005 21, −0.006 44, −0.012 56, and 0.036 75 cm−1 K−1, respectively. Interestingly, the frequency of the P1 mode changes directly from 161 to 156 cm−1 with increasing temperature, which is attributed to the switching between two independent Raman modes (P1H and P1L). The P1H mode is mainly contributed by the FE phase, while the P1L mode is mainly contributed by the antiferroelectric phase. Our results provide a fundamental understanding and analysis of the thermal–phonon coupling properties of few-layer NbOCl2 and promote the deep exploration of the basic physical properties of few-layer NbOCl2, which is crucial for the design and application of NbOCl2-based thermal and optoelectronic devices in the future.

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Science Fund for Distinguished Young Scholars of Hunan Province

Scientific Research Foundation of Hunan Provincial Education Department

Natural Science Foundation of Hunan Province

Suzhou Key Industrial Technology Innovation Project

Program for Changjiang Scholars and Innovative Research Team in University

Publisher

AIP Publishing

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