Series diode‐connected current mirror based linear and sensitive negative bias temperature instability monitoring circuit-Reference-Cited by-同舟云学术

Series diode‐connected current mirror based linear and sensitive negative bias temperature instability monitoring circuit

Published:2021-09-12 Issue:2 Volume:35 Page:
ISSN:0894-3370
Container-title:International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
language:en
Short-container-title:Int J Numerical Modelling

Author:

Bhootda Natwar¹^ORCID,Yadav Ankit¹,Neema Vaibhav¹,Shah Ambika Prasad²^ORCID,Vishvakarma Santosh Kumar³^ORCID

Affiliation:

1. Department of Electronics and Telecommunication IET‐Devi Ahilya University Indore India

2. Electrical Engineering Department Indian Institute of Technology Jammu Jammu India

3. Electrical Engineering Department Indian Institute of Technology Indore Indore India

Funder

Science and Engineering Research Board

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Science Applications,Modeling and Simulation

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/jnm.2953

Reference20 articles.

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2. Negative bias stress of MOS devices at high electric fields and degradation of MNOS devices

3. KumarSV KimK SapatnekarSS.Impact of NBTI on SRAM read stability and design for reliability. Paper presented at: 7th International Symposium on Quality Electronic Design (ISQED'06)IEEE.2006:6–pp.

4. Negative bias temperature instability: Road to cross in deep submicron silicon semiconductor manufacturing

5. A Low Area Overhead NBTI/PBTI Sensor for SRAM Memories

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