Al 2 O 3 ‐based surface passivation and insulated gate structure for AlGaN/GaN HFETs-Reference-Cited by-同舟云学术

Al 2 O 3 ‐based surface passivation and insulated gate structure for AlGaN/GaN HFETs

Published:2003-11-24 Issue:7 Volume: Page:2380-2384
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Hashizume Tamotsu¹,Ootomo Shinya¹,Hasegawa Hideki¹

Affiliation:

1. Research Center for Integrated Quantum Electronics (RCIQE), and Graduate School of Electronics and Information Engineering, Hokkaido University, North 13 West 8, 060‐8628 Sapporo, Japan

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200303446

Reference12 articles.

1. The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs

2. Si3N4/AlGaN/GaN–metal–insulator–semiconductor heterostructure field–effect transistors

3. The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs

4. Current Collapse in AlGaN/GaN HEMTs Investigated by Electrical and Optical Characterizations

5. Surface passivation of GaN and GaN/AlGaN heterostructures by dielectric films and its application to insulated-gate heterostructure transistors

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