Comparative evaluation of implantation damage produced by N and P ions in 6H‐SiC-Reference-Cited by-同舟云学术

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Comparative evaluation of implantation damage produced by N and P ions in 6H‐SiC

Published:2003-02 Issue:3 Volume: Page:875-880
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Camassel J.¹,Blanque S.¹²,Mestres N.³,Godignon P.²,Pascual J.⁴

Affiliation:

1. Groupe d'Etude des Semiconducteurs, cc074‐GES, 34 095 Montpellier, cedex 05, France

2. Centro Nacional de Microelectrónica, Campus UAB, 08193 Bellaterra (Ba), Spain

3. Institut de Ciència de Materials, Campus UAB, 08193 Bellaterra (Ba), Spain

4. Departament de Física, UAB, 08193 Bellaterra (Ba), Spain

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200306246

Reference6 articles.

1. Ionization Energies and Electron Mobilities in Phosphorus- and Nitrogen-Implanted 4H-Silicon Carbide

2. Montecarlo simulation of ion implantation into SiC-6H single crystal including channeling effect

3. High Electrical Activation of Aluminium and Nitrogen Implanted in 6H-SiC at Room Temperature by RF Annealing

4. Determination of the complex dielectric function of ion implanted amorphous SiC by spectroscopic ellipsometry

5. Confocal Raman Microprobe of Lattice Damage in N⁺ Implanted 6H-SiC

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of Al- and N-implanted 4H–SiC applying visible and deep UV Raman scattering spectroscopy;AIP Advances;2020-05-01

2. Effect of Xe ion (167 MeV) irradiation on polycrystalline SiC implanted with Kr and Xe at room temperature;Journal of Physics D: Applied Physics;2015-10-20

3. Quantitative analysis of the lattice reconstruction of ion-implanted SiC after visible light laser irradiation;Journal of Applied Physics;2009-03-15

4. Characterization of SiC Crystals by Using Deep UV Excitation Raman Spectroscopy;Materials Science Forum;2006-10

5. Deep ultraviolet Raman scattering characterization of ion-implanted SiC crystals;Journal of Applied Physics;2005-06-15

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