Deep ultraviolet Raman scattering characterization of ion-implanted SiC crystals
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1931039
Reference61 articles.
1. Effects of As+ion implantation on the Raman spectra of GaAs: ‘‘Spatial correlation’’ interpretation
2. Raman scattering evaluation of lattice damage and electrical activity in Be‐implanted GaAs
3. Resonant Raman-active acoustic phonons in ion-implanted GaAs
4. Morphology of the implantation-induced disorder in GaAs studied by Raman spectroscopyand ion channeling
5. Raman study on H+-implantation effects in highly doped n-GaAs
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