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Effects of proton irradiations on GaN‐based materials

  • Published:2004-09 Issue:10 Volume:1 Page:2466-2469
  • ISSN:1610-1634
  • Container-title:physica status solidi (c)
  • language:en
  • Short-container-title:phys. stat. sol. (c)

Author:

Chang J. P.1,Lin T. Y.,Hong H. F.2,Gunng T. C.2,Shen J. L.3,Chen Y. F.4

Affiliation:

1. Institute of Optoelectronic Sciences, National Taiwan Ocean University, Keelung, Taiwan

2. Institute of Nuclear Energy Research ROCAEC, LungTan, Taiwan

3. Department of Physics, Chung Yuan Christian University, Chung‐Li, Taiwan

4. Department of Physics, National Taiwan University, Taipei, Taiwan

Publisher

Wiley

Reference10 articles.

1. InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate

2. P. L. F.Hemment Application of Ion Beams to Materials (Inst. Phys. Conf. Lodon 1975) Ser. No. 28.

3. P. D.Townsend J. C.Kelly andN. E. W.Hartley Ion Implantation Sputtering and Their Application (Academic New York 1976).

4. Electrical isolation of InGaP by proton and helium ion irradiation

5. Electrical isolation of n-type InP by ion bombardment: Dose dependence and thermal stability

Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of 340 keV proton irradiation on InGaN/GaN blue light-emitting diodes;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2015-09

2. Proton Irradiation Effects on AlGaN/AlN/GaN Heterojunctions;IEEE Transactions on Nuclear Science;2015-02

3. Recoverable degradation of blue InGaN-based light emitting diodes submitted to 3 MeV proton irradiation;Applied Physics Letters;2014-11-24

4. The Effect of 3-MeV Proton Irradiation on the Performance of InGaN/GaN MQWs Solar Cells;IEEE Photonics Technology Letters;2014-08-01

5. Proton irradiation effects on HVPE GaN;Science China Technological Sciences;2012-06-22
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