Effects of 340 keV proton irradiation on InGaN/GaN blue light-emitting diodes-Reference-Cited by-同舟云学术

Effects of 340 keV proton irradiation on InGaN/GaN blue light-emitting diodes

Published:2015-09 Issue:5 Volume:33 Page:051215
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
language:en
Short-container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena

Author:

Kim Byung-Jae¹,Hwang Ya-Hsi¹,Ahn Shihyun¹,Ren Fan¹,Pearton Stephen J.²,Kim Jihyun³,Jang Tae Sung⁴

Affiliation:

1. Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611

2. Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611

3. Department of Chemical and Biological Engineering, Korea University, Seoul 136-713, South Korea

4. Samsung Electronics, Gyeonggi-Do 446-711, South Korea

Funder

Samsung Electronics

Defense Threat Reduction Agency (DTRA)

National Science Foundation (NSF)

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://avs.scitation.org/doi/pdf/10.1116/1.4930297

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