Recoverable degradation of blue InGaN-based light emitting diodes submitted to 3 MeV proton irradiation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4902870
Reference30 articles.
1. A model for the thermal degradation of metal/(p-GaN) interface in GaN-based light emitting diodes
2. Degradation of High-Brightness Green LEDs Submitted to Reverse Electrical Stress
3. Characterization of proton damage in light-emitting diodes
4. 1-15 MeV proton and alpha particle radiation effects on GaAs quantum well light emitting diodes [and QWIPs]
5. Proton damage in LEDs with wavelengths above the silicon wavelength cutoff
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1. Impact of radiation damage on the photoconductor and photodiode properties of GaN core–shell p–n junction microwires;Radiation Physics and Chemistry;2024-11
2. Effects of high-dose 80 MeV proton irradiation on the electroluminescent and electrical performance of InGaN light-emitting diodes;Physica Scripta;2023-07-14
3. Proton-irradiation-induced degradation in GaN-based UV LEDs: Role of unintentionally doped carbon;Applied Physics Letters;2023-04-03
4. Low-Frequency Noise in Light-Emitting Diodes Based on InGaN/GaN Quantum Wells under Electric Actions Accompanied with an Increase in the External Quantum Efficiency;Technical Physics;2021-01
5. Statistical Analysis of the Photoelectric Characteristics for InGaN/GaN MQWs Solar Cells Following Proton Irradiation;ECS Journal of Solid State Science and Technology;2020-06-22
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