Hydride vapor phase epitaxy of AlN: thermodynamic analysis of aluminum source and its application to growth
Author:
Affiliation:
1. Department of Applied Chemistry, Faculty of Technology, Tokyo University of Agriculture and Technology, 2‐24‐16 Naka‐cho, Koganei, Tokyo 184‐8588, Japan
Publisher
Wiley
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200303360
Reference8 articles.
1. Report on the growth of bulk aluminum nitride and subsequent substrate preparation
2. Seeded growth of AlN bulk single crystals by sublimation
3. Free-Standing GaN Substrates by Hydride Vapor Phase Epitaxy
4. Preparation of Large Freestanding GaN Substrates by Hydride Vapor Phase Epitaxy Using GaAs as a Starting Substrate
5. Preparation of Freestanding GaN Wafers by Hydride Vapor Phase Epitaxy with Void-Assisted Separation
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