Author:
Aggerstam T.,Sjödin M.,Lourdudoss S.
Reference12 articles.
1. Resistivity control in unintentionally doped GaN films grown by MOCVD
2. , , , , , , , , , and , EW-MOVPE XI, 367 (2005).
3. Growth of AlGaN/GaN based electronic device structures with semi‐insulating GaN buffer and AlN interlayer
4. Engineering of an insulating buffer and use of AlN interlayers: two optimisations for AlGaN–GaN HEMT-like structures
5. et al., 2002 GaAs MANTECH Conference, digest of papers, pp. 204–206.
Cited by
15 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献