Solar blind detectors based on AlGaN grown on sapphire
Author:
Affiliation:
1. Centre de Recherche sur l'HétéroEpitaxie et ses Applications, rue Bernard Grégory, Sophia Antipolis, 06560 Valbonne, France
2. Thales Research and Technology, Domaine de Corbeville, 91404 Orsay Cedex, France
Publisher
Wiley
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200460603
Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Ga2O3 metal–insulator-semiconductor solar-blind photodiodes with plasmon-enhanced responsivity and suppressed internal photoemission;Journal of Physics D: Applied Physics;2023-02-23
2. Progress on AlGaN-based solar-blind ultraviolet photodetectors and focal plane arrays;Light: Science & Applications;2021-04-30
3. Nanoscale structural and electrical properties of graphene grown on AlGaN by catalyst-free chemical vapor deposition;Nanotechnology;2020-10-09
4. Influence of the heterostructure design on the optical properties of GaN and Al0.1Ga0.9N quantum dots for ultraviolet emission;Journal of Applied Physics;2017-08-28
5. Investigation of AlyGa1−yN/Al0.5Ga0.5N quantum dot properties for the design of ultraviolet emitters;Japanese Journal of Applied Physics;2016-04-06
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