Investigation of AlyGa1−yN/Al0.5Ga0.5N quantum dot properties for the design of ultraviolet emitters-Reference-Cited by-同舟云学术

Investigation of AlyGa1−yN/Al0.5Ga0.5N quantum dot properties for the design of ultraviolet emitters

Published:2016-04-06 Issue:5S Volume:55 Page:05FG06
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Brault Julien,Matta Samuel,Ngo Thi-Huong,Korytov Maxim,Rosales Daniel,Damilano Benjamin,Leroux Mathieu,Vennéguès Philippe,Al Khalfioui Mohamed,Courville Aimeric,Tottereau Olivier,Massies Jean,Gil Bernard

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/55/i=5S/a=05FG06/pdf

Reference38 articles.

1. Development and future of ultraviolet light-emitting diodes: UV-LED will replace the UV lamp

2. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres

3. Advances in group III-nitride-based deep UV light-emitting diode technology

4. High-efficiency AlGaN-based UV light-emitting diode on laterally overgrown AlN

5. Fabrication of a low threading dislocation density ELO-AlN template for application to deep-UV LEDs

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