Recent progress of high power GaN‐based violet laser diodes
Author:
Affiliation:
1. Samsung Advanced Institute of Technology, P.O. Box 111, Suwon, 440‐600, Korea
Publisher
Wiley
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200303334
Reference5 articles.
1. High-Power and Long-Lifetime InGaN Multi-Quantum-Well Laser Diodes Grown on Low-Dislocation-Density GaN Substrates
2. GaN-Based High Power Blue-Violet Laser Diodes
3. Abnormal dependence of contact resistivity on hole concentration in nonalloyed ohmic contacts to p-GaN
4. Nonalloyed ohmic contacts on low‐temperature molecular beam epitaxial GaAs: Influence of deep donor band
5. MitsuoFukuda Reliability and Degradation of Semiconductor Lasers and LEDs (Artech House Boston 1991).
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