Formation of laser diode ridges by the dry-etching of Pd and AlGaN/GaN superlattices-Reference-Cited by-同舟云学术

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Formation of laser diode ridges by the dry-etching of Pd and AlGaN/GaN superlattices

Published:2016-12 Issue: Volume:307 Page:1107-1111
ISSN:0257-8972
Container-title:Surface and Coatings Technology
language:en
Short-container-title:Surface and Coatings Technology

Author:

Kim Jae-Kwan,Lee Sung-Nam,Park Min-Ju,Kwak Joon-Seop,Kim Kyoung-Bo,Lee Ji-Myon

Funder

Ministry of Education

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Reference34 articles.

1. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes

2. Prospective for Gallium Nitride-Based Optical Waveguide Modulators

3. The Blue Laser Diode: GaN-based Light Emitters and Lasers;Nakamura,1997

4. Fabrication of GaN-based ridge waveguides with very smooth and vertical sidewalls by combined plasma dry etching and wet chemical etching

5. Removal of dry etch damage in p-type GaN by wet etching of sacrificial oxide layer

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study of fabrication and characterization of high power 850 nm vertical-cavity surface-emitting laser arrays;Surface and Coatings Technology;2020-04

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