Prospective for Gallium Nitride-Based Optical Waveguide Modulators-Reference-Cited by-同舟云学术

Prospective for Gallium Nitride-Based Optical Waveguide Modulators

Published:2012 Issue:8 Volume:E95.C Page:1363-1368
ISSN:0916-8524
Container-title:IEICE Transactions on Electronics
language:en
Short-container-title:IEICE Trans. Electron.

Author:

STOLZ Arnaud¹,CONSIDINE Laurence²,DOGHECHE Elhadj¹,DECOSTER Didier¹,PAVLIDIS Dimitris²

Affiliation:

1. Institute of Electronics, Microelectronics and Nanotechnology, CNRS and University of Lille 1

2. Technische Universitt Darmstadt, Department of High Frequencies Electronics

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.jstage.jst.go.jp/article/transele/E95.C/8/E95.C_1363/_pdf

Reference10 articles.

1. [1] R. Hui, S. Taherion, Y. Wan, J. Li, S.X. Jin, J.Y. Lin, and H.X. Jiang, “GaN-based waveguide devices for long-wavelength optical communications,” Appl. Phys. Lett., vol.82, pp.1326-1328, 2003.

2. [2] C.Y. Huang, Y.D. Lin, A. Tyagi, A. Chakraborty, H. Ohta, J.S. Speck, S.P DenBaars, and S. Nakamura, “Optical waveguide simulations for the optimization of InGaN-based green laser diodes,” J. Appl. Phys., vol.107, 023101, 2010.

3. [3] R. Geiss, A. Chowdhury, C.M. Staus, H.M. Ng, S.S. Park, and J.Y. Han, “Low loss GaN at 1550nm,” Appl. Phys. Lett., vol.87, 132107, 2005.

4. [4] O. Skorka, B. Meyler, and J. Salzman, “Propagation loss in GaN-based ridge waveguides,” Appl. Phys. Lett., vol.84, no.19, pp.3801-3803, 2004.

5. [5] E. Cho, D. Pavlidis, and E. Sillero, “GaN/air gap based micro-opto-electro-mechanical (MOEM) Fabry-Pérot filters,” Phys. Stat. Sol. (c), vol.4, no.7, pp.2764-2767, 2007.

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Recent Advances in Mechanically Transferable III‐Nitride Based on 2D Buffer Strategy;Advanced Functional Materials;2023-01-15

2. Ultra-wideband integrated photonic devices on silicon platform: from visible to mid-IR;Nanophotonics;2023-01-02

3. Femtosecond laser inscription of Bragg gratings on a thin GaN film grown on a sapphire substrate;Optics and Lasers in Engineering;2018-10

4. Reducing Optical Losses in GaN Waveguides - Toward an Electro-Optic Phase Modulator;physica status solidi (a);2018-03-23

5. Optical losses in p-type layers of GaN ridge waveguides in the IR region;Applied Physics Letters;2017-07-10