Fabrication of GaN-based ridge waveguides with very smooth and vertical sidewalls by combined plasma dry etching and wet chemical etching-Reference-Cited by-同舟云学术

Fabrication of GaN-based ridge waveguides with very smooth and vertical sidewalls by combined plasma dry etching and wet chemical etching

Published:2015-07-24 Issue:10 Volume:212 Page:2341-2344
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Li Wanyong¹,Luo Yi¹,Xiong Bing¹,Sun Changzheng¹,Wang Lai¹,Wang Jian¹,Han Yanjun¹,Yan Jianchang²,Wei Tongbo²,Lu Hongxi²

Affiliation:

1. Department of Electronic Engineering, Tsinghua National Laboratory for Information Science and Technology, State Key Lab on Integrated Optoelectronics; Tsinghua University; 10084 Beijing P.R. China

2. Research and Development Center for Semiconductor Lighting, Institute of Semiconductors; Chinese Academy of Sciences; 100083 Beijing P.R. China

Funder

National Basic Research Program of China

National Natural Science Foundation of China

Open Fund of State Key Laboratory on Integrated Optoelectronics

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201532223/fullpdf

Reference19 articles.

1. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes

2. GaN directional couplers for integrated quantum photonics

3. GaN-based waveguide devices for long-wavelength optical communications

4. III-nitride-based planar lightwave circuits for long wavelength optical communications

5. All-Optical Switch Utilizing Intersubband Transition in GaN Quantum Wells

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