Evolution of In‐based compound semiconductor quantum dots on Si (001)
Author:
Affiliation:
1. Graduate School of Arts and Sciences, University of Tokyo, Komaba, Meguro, Tokyo 153‐8902, Japan
2. PRESTO, Japan Science and Technology Corporation (JST), Kawaguchi, Saitama 332‐0012, Japan
Publisher
Wiley
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200303009
Reference17 articles.
1. Critical layer thickness for self-assembled InAs islands on GaAs
2. Self‐organized growth of regular nanometer‐scale InAs dots on GaAs
3. Vertically Self-Organized InAs Quantum Box Islands on GaAs(100)
4. Light emission from individual self-assembled InAs/GaAs quantum dots excited by tunneling current injection
5. Scaling properties of InAs/GaAs self-assembled quantum dots
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