Fabrication of metal/quantum dot/semiconductor structure on silicon substrate
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference11 articles.
1. A high-speed silicon optical modulator based on a metal–oxide–semiconductor capacitor
2. Room-Temperature Optically Pumped (Al)GaSb Vertical-Cavity Surface-Emitting Laser Monolithically Grown on an Si(1 0 0) Substrate
3. Heteroepitaxial growth of GaSb on Si(001) substrates
4. Highly efficient radiative recombination of electron–hole pairs localized at compound semiconductor quantum dots embedded in Si
5. Structure and optical properties of Si/InAs/Si layers grown by molecular beam epitaxy on Si substrate
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Effects of Ga-induced reconstructed surfaces and atomic steps on the morphology of GaSb islands on Si(100);Applied Surface Science;2015-10
2. 1.3-μm wavelength-tunable quantum-dot optical frequency comb generator integrated with absorptive optical attenuator;physica status solidi (c);2011-12-21
3. Nano-crystalline Sb-based compound semiconductor formed on silicon;Journal of Crystal Growth;2011-05
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