InN quantum dots grown on GaN (0001) by molecular beam epitaxy
Author:
Publisher
Wiley
Subject
Condensed Matter Physics
Reference11 articles.
1. Optical properties of InN—the bandgap question
2. Acceptor states in the photoluminescence spectra ofn−InN
3. Indium nitride quantum dots grown by metalorganic vapor phase epitaxy
4. Nucleation of InN quantum dots on GaN by metalorganic vapor phase epitaxy
5. Raman scattering in large single indium nitride dots: Correlation between morphology and strain
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1. Growth temperature dependence of cubic GaN step structures and cubic InN dot arrays grown on MgO (001) vicinal substrates;Japanese Journal of Applied Physics;2019-05-22
2. Stacked structure of self-organized cubic InN nano-dots grown by molecular beam epitaxy;physica status solidi (c);2013-09-25
3. RF-MBE growth of cubic InN nano-scale dots on cubic GaN;Journal of Crystal Growth;2013-09
4. High-Resolution Electron Microscopy of Semiconductor Heterostructures and Nanostructures;Semiconductor Research;2012
5. Self-Assisted Nucleation and Vapor–Solid Growth of InAs Nanowires on Bare Si(111);Crystal Growth & Design;2011-08-05
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