Self-Assisted Nucleation and Vapor–Solid Growth of InAs Nanowires on Bare Si(111)
Author:
Affiliation:
1. Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany
Publisher
American Chemical Society (ACS)
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/cg200568m
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5. Vertical Surrounding Gate Transistors Using Single InAs Nanowires Grown on Si Substrates
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