Indium nitride quantum dots grown by metalorganic vapor phase epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1613044
Reference11 articles.
1. Unusual properties of the fundamental band gap of InN
2. Quantum correlation among photons from a single quantum dot at room temperature
3. A Quantum Dot Single-Photon Turnstile Device
4. Triggered Single Photons from a Quantum Dot
5. Single quantum dots emit single photons at a time: Antibunching experiments
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1. N-Polar Indium Nitride Quantum Dashes and Quantum Wire-like Structures: MOCVD Growth and Characterization;Crystals;2023-04-19
2. In(Ga)N 3D Growth on GaN-Buffered On-Axis and Off-Axis (0001) Sapphire Substrates by MOCVD;Nanomaterials;2022-10-06
3. Metalorganic chemical vapor deposition of InN quantum dots and nanostructures;Light: Science & Applications;2021-07-20
4. InN Quantum Dots by Metalorganic Chemical Vapor Deposition for Optoelectronic Applications;Frontiers in Materials;2021-03-19
5. Quantitative investigation of indium distribution in InN wetting layers and dots grown by metalorganic chemical vapor deposition;Applied Physics Express;2020-05-15
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