Stacked structure of self-organized cubic InN nano-dots grown by molecular beam epitaxy-Reference-Cited by-同舟云学术

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Stacked structure of self-organized cubic InN nano-dots grown by molecular beam epitaxy

Published:2013-09-25 Issue:11 Volume:10 Page:1545-1548
ISSN:1862-6351
Container-title:physica status solidi (c)
language:en
Short-container-title:Phys. Status Solidi C

Author:

Yagi Shuhei,Suzuki Junichiro,Orihara Misao,Hijikata Yasuto,Yaguchi Hiroyuki

Funder

Adaptable and Seamless Technology Transfer Program through target-driven R&D (A-STEP) of Japan Science and Technology Agency

Publisher

Wiley

Subject

Condensed Matter Physics

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssc.201300275/fullpdf

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Critical thickness as a function of the indium molar fraction in cubic InXGa1-XN and the influence in the growth of nanostructures;Materials Science in Semiconductor Processing;2020-08

2. Growth temperature dependence of cubic GaN step structures and cubic InN dot arrays grown on MgO (001) vicinal substrates;Japanese Journal of Applied Physics;2019-05-22

3. Growth of InN/GaN dots on 4H-SiC(0001) 4° off vicinal substrates by molecular beam epitaxy;Journal of Crystal Growth;2017-11

4. Self-organized growth of cubic InN dot arrays on cubic GaN using MgO (001) vicinal substrates;physica status solidi (b);2016-11-10

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