Extraction-efficiency enhancement of InGaN-based vertical LEDs on hemispherically patterned sapphire
Author:
Publisher
Wiley
Subject
Condensed Matter Physics
Reference8 articles.
1. High Output Power 365 nm Ultraviolet Light Emitting Diode of GaN-Free Structure
2. GaN/Mirror/Si Light-Emitting Diodes for Vertical Current Injection by Laser Lift-Off and Wafer Bonding Techniques
3. Damage-free separation of GaN thin films from sapphire substrates
4. Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening
5. Fabrication of Large-Area GaN-Based Light-Emitting Diodes on Cu Substrate
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2. Combined Experimental and Monte-Carlo Ray-Tracing Approach for Optimizing Light Extraction in LED COB Modules;ISRN Optics;2013-07-24
3. Carrier Transport Mechanism of Ni/Ag/Pt Contacts to p-Type GaN;IEEE Transactions on Electron Devices;2012-03
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5. Carrier Transport and Effective Barrier Height of Low Resistance Metal Contact to Highly Mg-Doped p-GaN;Applied Physics Express;2011-07-19
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