InGaAs/GaAs porous superlattice as new material for quantum electronics
Author:
Affiliation:
1. Institute for Physics of Microstructures, Russian Academy of Sciences, GSP‐105, 603095 Nizhny Novgorod, Russia
2. Nizhny Novgorod Lobachevsky State University, 23, Gagarin str., 603600 Nizhny Novgorod, Russia
Publisher
Wiley
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200306241
Reference10 articles.
1. Optical and electrical properties of porous gallium arsenide
2. Attosecond high-temperature subnanometer single electronics on transition-metal atoms
3. Discrete tunneling of holes in porous silicon
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