Structure and electronic properties of the 3C-SiC/SiGeC/Si(100) heterojunction formed by the vacuum chemical epitaxy method-Reference-Cited by-同舟云学术

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Structure and electronic properties of the 3C-SiC/SiGeC/Si(100) heterojunction formed by the vacuum chemical epitaxy method

Published:2014-11 Issue:6 Volume:55 Page:1180-1189
ISSN:0022-4766
Container-title:Journal of Structural Chemistry
language:en
Short-container-title:J Struct Chem

Author:

Orlov L. K.,Vdovin V. I.,Ivina N. L.,Shteinman E‘. A.,Orlov M. L.,Drozdov Yu. N.,Petrova V. F.

Publisher

Pleiades Publishing Ltd

Subject

Materials Chemistry,Inorganic Chemistry,Physical and Theoretical Chemistry

Link

http://link.springer.com/content/pdf/10.1134/S0022476614060298.pdf

Reference24 articles.

1. R. W. Price, E. S. Tok, N. J. Woods, and J. Zhang, Appl. Phys. Lett., 81, 3780 (2002).

2. A. A. Lebedev, A. M. Strelchuk, D. V. Shamshur, et al., Semiconductors, 44, 1389 (2010).

3. N. N. Ledentsov, V. M. Ustinov, V. A. Shchukin, et al., Semiconductors, 32, 343 (1998).

4. J. Zhu, Z. Liu, X. L. Wu, et al., Nanotechnology, 18, 365603 (2007).

5. L. Zhang, W. Yang, H. Jin, et al., Appl. Phys. Lett., 89, 143101 (2006).

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