1. V. V. Mamutin, V. P. Ulin, V. V. Tret’yakov, et al., Pis’ma Zh. Tekh. Fiz. 25(1), 3 (1999) [Tech. Phys. Lett. 25 (1), 1 (1999)].
2. A. A. Lebedev and Yu. V. Rud’, Pis’ma Zh. Tekh. Fiz. 22(6), 13 (1996) [Tech. Phys. Lett. 22, 483 (1996)].
3. D. N. Goryachev and O. M. Sreseli, Fiz. Tekh. Poluprovodn. (St. Petersburg) 31, 1383 (1997) [Semiconductors 31, 1192 (1997)].
4. Yu. N. Buzynin, S. A. Gusev, M. N. Drozdov, et al., in Proceedings of the 2nd Russian Conference on the Physics of Semiconductors, Zelenogorsk, 1996, Vol. 2, p. 123.
5. L. P. Sidorova, S. A. Gavrilov, and A. V. Emel’yanov, in Proceedings of All-Russia Science and Technology Conference on Microelectronics and Nanoelectronics, Zvenigorod, 1998, Vol. 2, PP3–33.