Growth pressure dependence of residual strain and threading dislocations in the GaN layer-Reference-Cited by-同舟云学术

Growth pressure dependence of residual strain and threading dislocations in the GaN layer

Published:2004-09 Issue:10 Volume:1 Page:2458-2461
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Lee Sung‐Nam¹²,Son J. K.¹,Paek H. S.¹,Sakong T.¹,Lee W.¹,Kim K. H.¹,Kim S. S.³,Lee Y. J.³,Noh D. Y.³,Yoon E.²,Nam O. H.¹,Park Y.¹

Affiliation:

1. Photonics Lab, Samsung Advanced Institute of Technology, Suwon 440‐600, Korea

2. Compound Semiconductor Epitaxy Laboratory, School of Materials Science and Engineering, Seoul National University, Shinlim Dong, Kwan‐Ak Ku, Seoul 151‐742, Korea

3. Department of Materials Science and Engineering, Kwangju Institute of Science and Technology, Gwangju 500‐712, Korea

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200405007

Reference11 articles.

1. Residual strain dependence of optical characteristics in GaN layers grown on (0001) sapphire substrates

2. Influence of different types of threading dislocations on the carrier mobility and photoluminescence in epitaxial GaN

3. Control and elimination of cracking of AlGaN using low-temperature AlGaN interlayers

4. Strain relief and its effect on the properties of GaN using isoelectronic In doping grown by metalorganic vapor phase epitaxy

5. Evolution of stress relaxation and yellow luminescence in GaN/sapphire by Si incorporation

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