Influence of different types of threading dislocations on the carrier mobility and photoluminescence in epitaxial GaN
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1465531
Reference15 articles.
1. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures
2. InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices
3. Defect structure of metal‐organic chemical vapor deposition‐grown epitaxial (0001) GaN/Al2O3
4. Scattering of electrons at threading dislocations in GaN
5. The role of dislocation scattering in n-type GaN films
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