Effects of Al composition on luminescence properties of europium implanted Al x Ga 1− x N (0 ≤ x ≤ 1)-Reference-Cited by-同舟云学术

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Effects of Al composition on luminescence properties of europium implanted Al x Ga 1− x N (0 ≤ x ≤ 1)

Published:2003-11-24 Issue:7 Volume: Page:2623-2626
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Nakanishi Y.¹,Wakahara A.¹,Okada H.¹,Yoshida A.¹,Ohshima T.²,Itoh H.²,Shibata T.³,Tanaka M.³

Affiliation:

1. Department of Electrical and Electronic Engineering, Toyohashi University of Technology, 1–1 Hibarigaoka, Tempaku, Toyohashi 441‐8580, Japan

2. Japan Atomic Energy Research Institute, 1233 Watanuki, Takasaki 370‐1292, Japan

3. NGK Insulators, LTD., 2‐56 Suda‐cho, Mizuho, Nagoya 467‐8530, Japan

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200303440

Reference9 articles.

1. Radiative and Multiphonon Relaxation of Rare-Earth Ions inY2O3

2. Blue emission from Tm-doped GaN electroluminescent devices

3. Visible and infrared rare-earth-activated electroluminescence from indium tin oxide Schottky diodes to GaN:Er on Si

4. Red light emission by photoluminescence and electroluminescence from Eu-doped GaN

5. Effect of Alloy Composition on Photoluminescence Properties of Europium Implanted AlGaInN

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1. Semiconductor Characteristic and Ferromagnetism in Rare Earth (Eu, Er)-Doped AlGaN Alloy: LSDA + U Approach;Brazilian Journal of Physics;2022-12-28

2. Europium-Implanted AlN Nanowires for Red Light-Emitting Diodes;ACS Applied Nano Materials;2022-01-06

3. Eu3+ optical activation engineering in Al Ga1-N nanowires for red solid-state nano-emitters;Applied Materials Today;2021-03

4. Conductive transparent (InGa)2O3 film as host for rare earth Eu;AIP Advances;2020-02-01

5. Stability, Electronic and Magnetic Properties of Rare Earth (Eu, Tm) Implanted InGaN;Journal of Superconductivity and Novel Magnetism;2019-01-04

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