Visible and infrared rare-earth-activated electroluminescence from indium tin oxide Schottky diodes to GaN:Er on Si
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.123286
Reference19 articles.
1. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures
2. High‐brightness blue and green light‐emitting diodes
3. 1.54‐μm electroluminescence of erbium‐doped silicon grown by molecular beam epitaxy
4. Room‐temperature electroluminescence from Er‐doped crystalline Si
5. Room‐temperature sharp line electroluminescence at λ=1.54 μm from an erbium‐doped, silicon light‐emitting diode
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