Optical and electrical characterization of SiO2 films obtained by atmospheric pressure chemical vapor deposition
Author:
Publisher
Wiley
Subject
Condensed Matter Physics
Reference19 articles.
1. Chemical kinetics in chemical vapor deposition: growth of silicon dioxide from tetraethoxysilane (TEOS)
2. SiO2 Films from Tetraethoxysilane‐Based LPCVD: An Experimental Investigation of the By‐Product‐Inhibited Deposition Mechanism
3. Modeling of Silicon Dioxide Chemical Vapor Deposition from Tetraethoxysilane and Ozone
4. Deoxidization of Water Desorbed from APCVD TEOS-O[sub 3] SiO[sub 2] Film with Thin Titanium Cap Film
5. Boundary Layer Chemistry Probed by in Situ Infrared Spectroscopy during SiO2 Deposition at Atmospheric Pressure from Tetraethylorthosilicate and Ozone
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1. Large temperature range model for the atmospheric pressure chemical vapor deposition of silicon dioxide films on thermosensitive substrates;Chemical Engineering Research and Design;2020-09
2. Surface Relief Forming on Optical Ceramic Articles by Laser Pyrolysis of Organosilicon Materials;Glass and Ceramics;2017-03-29
3. Characterization of Chemical Vapor Deposited Tetraethyl Orthosilicate based SiO2 Films for Photonic Devices;Materials Science;2016-02-18
4. Applications of porous silicon formed by electrochemical etching using an electrolyte based on HF:formaldehyde;Applied Physics A;2013-01-19
5. Formation of SiOF Films by APCVD Using TEOS-O3-HF Gas Mixture;Journal of Nano Research;2010-02
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