Influence of Sb surfactant on the structural and optical properties of InGaAsN/GaAs multi‐quantum wells grown by metalorganic chemical vapor deposition
Author:
Affiliation:
1. Department of Semiconductor Science and Technology, Chonbuk National University, Duckjin‐Dong, Duckjin‐ku, Chonju 561‐765, Korea
Publisher
Wiley
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200303556
Reference12 articles.
1. Electronic structure and phase stability ofGaAs1−xNxalloys
2. Room‐temperature photoluminescence in strained quantum wells of InGaAs/GaAs grown by molecular‐beam epitaxy
3. Carrier recombination rates in strained-layer InGaAs-GaAs quantum wells
4. Surfactant controlled growth of GaInP by organometallic vapor phase epitaxy
5. Band-gap control of GaInP using Sb as a surfactant
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1. Application of an Sb Surfactant in InGaAs Nano-ridge Engineering on 300 mm Silicon Substrates;Crystal Growth & Design;2021-02-08
2. In-rich molecular beam epitaxy of InAs on Sb-terminated GaAs(001) surface;Journal of Crystal Growth;2013-05
3. Antimony Surfactant Effect on Green Emission InGaN/GaN Multi Quantum Wells Grown by MOCVD;Journal of Nanoscience and Nanotechnology;2011-02-01
4. Optical investigations on the surfactant effects of Sb on InGaAsN multiple quantum wells grown by MOVPE;Journal of Crystal Growth;2007-01
5. Considerable improvement of optical property of GaInNAs/GaAs quantum well;Journal of Crystal Growth;2004-12
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