Room‐temperature photoluminescence in strained quantum wells of InGaAs/GaAs grown by molecular‐beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.350697
Reference11 articles.
1. Cavity length dependence of the wavelength of strained‐layer InGaAs/GaAs lasers
2. Cavity length dependence of the wavelength of strained‐layer InGaAs/GaAs lasers
3. Optical Properties of Pseudomorphic InxGa1−xAs Quantum Wells
4. Photoluminescence characterisation of InGaAs/GaAs quantum well structures
5. Thermal quenching of the photoluminescence of InGaAs/GaAs and InGaAs/AlGaAs strained‐layer quantum wells
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1. Room temperature luminescent InGaAs/GaAs core-shell nanowires;Applied Physics Letters;2008-08-25
2. The tri-methyl-Sb flow and the surfactant time effect on InGaAsN/GaAs-strained MQWs grown by MOCVD;Journal of Crystal Growth;2004-10
3. Influence of annealing and surfactant on InGaAsN/GaAs multiple quantum well;Journal of Crystal Growth;2004-07
4. Influence of Sb surfactant on the structural and optical properties of InGaAsN/GaAs multi‐quantum wells grown by metalorganic chemical vapor deposition;physica status solidi (c);2003-11-24
5. Temperature dependence of the photoluminescence properties and band gap energy of InxGa1−xAs/GaAs quantum wells;Journal of Electronic Materials;2000-12
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