Improvement of surface roughness and reduction of threading dislocation density in AlN/AlGaN templates on sapphire by employing trimethylaluminum pulsed supply growth
Author:
Publisher
Wiley
Subject
Condensed Matter Physics
Reference12 articles.
1. Quaternary InAlGaN-based high-efficiency ultraviolet light-emitting diodes
2. 350.9 nm UV Laser Diode Grown on Low-Dislocation-Density AlGaN
3. Milliwatt power deep ultraviolet light-emitting diodes over sapphire with emission at 278 nm
4. 250nmAlGaN light-emitting diodes
5. 231–261nm AlGaN deep-ultraviolet light-emitting diodes fabricated on AlN multilayer buffers grown by ammonia pulse-flow method on sapphire
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1. Device characteristics and performance estimation of nearly lattice-matched InAlN/AlGaN heterostructure field-effect transistors;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2016-09
2. Defect distribution and compositional inhomogeneities in Al0.5Ga0.5N layers grown on stepped surfaces;Semiconductor Science and Technology;2015-12-14
3. V-pit to truncated pyramid transition in AlGaN-based heterostructures;Semiconductor Science and Technology;2015-10-15
4. Defect analysis in AlGaN layers on AlN templates obtained by epitaxial lateral overgrowth;Journal of Crystal Growth;2014-09
5. Analysis of pulsed injection of precursors in AlN-MOVPE growth by computational fluid simulation;physica status solidi (c);2010-06-10
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