Defect distribution and compositional inhomogeneities in Al0.5Ga0.5N layers grown on stepped surfaces-Reference-Cited by-同舟云学术

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Defect distribution and compositional inhomogeneities in Al0.5Ga0.5N layers grown on stepped surfaces

Published:2015-12-14 Issue:2 Volume:31 Page:025007
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Mogilatenko A,Knauer A,Zeimer U,Weyers M

Funder

Bundesministerium für Bildung und Forschung (BMBF):Ultra-Sense,

Deutsche Forschungsgemeinschaft

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/31/i=2/a=025007/pdf

Reference19 articles.

1. 222-282 nm AlGaN and InAlGaN-based deep-UV LEDs fabricated on high-quality AlN on sapphire

2. Robust 290 nm Emission Light Emitting Diodes over Pulsed Laterally Overgrown AlN

3. Epitaxial lateral overgrowth of AlxGa1−xN (x>0.2) on sapphire and its application to UV-B-light-emitting devices

4. Fabrication of a low threading dislocation density ELO-AlN template for application to deep-UV LEDs

5. Growth of AlGaN and AlN on patterned AlN/sapphire templates

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Status and Prospects of AlN Templates on Sapphire for Ultraviolet Light‐Emitting Diodes;physica status solidi (a);2020-03-06

2. Formation mechanism and suppression of Ga-rich streaks at macro-step edges in the growth of AlGaN on an AlN/sapphire-template;Journal of Crystal Growth;2020-03

3. Influence of substrate off-cut angle on the performance of 310 nm light emitting diodes;Journal of Crystal Growth;2019-11

4. Crystal defect analysis in AlN layers grown by MOVPE on bulk AlN;Journal of Crystal Growth;2019-01

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