Dislocation nucleation in heteroepitaxial semiconducting films-Reference-Cited by-同舟云学术

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Dislocation nucleation in heteroepitaxial semiconducting films

Published:2009-08 Issue:8 Volume:6 Page:1827-1835
ISSN:1862-6351
Container-title:physica status solidi (c)
language:en
Short-container-title:Phys. Status Solidi (c)

Author:

Pichaud B.,Burle N.,Texier M.,Alfonso C.,Gailhanou M.,Thibault-Pénisson J.,Fontaine C.,Vdovin V. I.

Publisher

Wiley

Subject

Condensed Matter Physics

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Epitaxial growth of GaInAsBi thin films on Si (001) substrate using pulsed laser deposition;Vacuum;2024-09

2. Capturing Dislocation Half-Loop Formation and Dynamics in Epitaxial Growth Atomistically at Diffusive Time Scales;Materialia;2021-12

3. Atomic scale mechanisms and brittle to ductile transition at low size in silicon;Materials Today: Proceedings;2018

4. Remarkable Strength Characteristics of Defect-Free SiGe/Si Heterostructures Obtained by Ge Condensation;The Journal of Physical Chemistry C;2016-09-02

5. Materials properties and dislocation dynamics in InAsP compositionally graded buffers on InP substrates;Journal of Applied Physics;2014-04-21

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