Materials properties and dislocation dynamics in InAsP compositionally graded buffers on InP substrates
Author:
Funder
DOE
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4871289
Reference21 articles.
1. Totally relaxed GexSi1−xlayers with low threading dislocation densities grown on Si substrates
2. Relaxed GexSi1−x structures for III–V integration with Si and high mobility two-dimensional electron gases in Si
3. Compositionally-graded InGaAs–InGaP alloys and GaAsSb alloys for metamorphic InP on GaAs
4. Evolution of microstructure and dislocation dynamics in In[sub x]Ga[sub 1−x]P graded buffers grown on GaP by metalorganic vapor phase epitaxy: Engineering device-quality substrate materials
5. High-quality InAsyP1−y step-graded buffer by molecular-beam epitaxy
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