Direct MOVPE- and MBE-growth of a-plane GaN on r-plane sapphire
Author:
Publisher
Wiley
Subject
Condensed Matter Physics
Reference6 articles.
1. Structural characterization of nonpolar (112̄0) a-plane GaN thin films grown on (11̄02) r-plane sapphire
2. Optimization of a-plane GaN growth by MOCVD on r-plane sapphire
3. Epitaxial growth of gallium nitride thin films on A-Plane sapphire by molecular beam epitaxy
4. Molecular-beam epitaxy of GaN/AlxGa1−xN multiple quantum wells on R-plane (101̄2) sapphire substrates
5. Direct Growth ofa-Plane GaN onr-Plane Sapphire Substrate by Metalorganic Vapor Phase Epitaxy
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1. Catalyst free self-organized grown high-quality GaN nanorods;physica status solidi (b);2011-07-18
2. Electrical properties of GaN grown on a-plane GaN template by plasma-assisted molecular beam epitaxy;Journal of Crystal Growth;2011-06
3. TEM characterization of catalyst- and mask-free grown GaN nanorods;Journal of Physics: Conference Series;2010-02-01
4. Effect of NH3 flow rate on m-plane GaN growth on m-plane SiC by metalorganic chemical vapor deposition;Journal of Crystal Growth;2009-07
5. X-ray diffraction study of strain and defect structure of nonpolar a-plane GaN-layers grown on r-plane sapphire;physica status solidi (a);2009-06-22
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