Improvement of the surface morphology ofa -plane InN using low-temperature InN buffer layers
Author:
Publisher
Wiley
Subject
Condensed Matter Physics
Reference20 articles.
1. Visible light-emitting diodes using a-plane GaN–InGaN multiple quantum wells over r-plane sapphire
2. Nonpolar InGaN∕GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak
3. Demonstration of Nonpolarm-Plane InGaN/GaN Light-Emitting Diodes on Free-Standingm-Plane GaN Substrates
4. Polarization anisotropy in the electroluminescence of m-plane InGaN–GaN multiple-quantum-well light-emitting diodes
5. Nonpolarm-Plane Blue-Light-Emitting Diode Lamps with Output Power of 23.5 mW under Pulsed Operation
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1. Effect of indium accumulation on the characteristics of a-plane InN epi-films under different growth conditions;Thin Solid Films;2015-08
2. X-ray diffraction study of A- plane non-polar InN epilayer grown by MOCVD;SPIE Proceedings;2015-03-13
3. Angular-dependent Raman study of a- and s-plane InN;Journal of Applied Physics;2015-02-21
4. Molecular beam epitaxy of low-bandgap InGaN;Molecular Beam Epitaxy;2013
5. RF-MBE growth of semipolar InN(10-13) and InGaN(10-13) on GaAs(110);physica status solidi (c);2012-02-29
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