Effect of indium accumulation on the characteristics of a-plane InN epi-films under different growth conditions-Reference-Cited by-同舟云学术

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Effect of indium accumulation on the characteristics of a-plane InN epi-films under different growth conditions

Published:2015-08 Issue: Volume:589 Page:322-326
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Lo Yun-Yo,Huang Man-Fang,Chiang Yu-Chia,Fan Jenn-Chyuan

Funder

National Science Council Taiwan

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference33 articles.

1. Effect of epitaxial temperature on N-polar InN films grown by molecular beam epitaxy;Wang;J. Appl. Phys.,2006

2. Heteroepitaxial growth of In-face InN on GaN (0001) by plasma-assisted molecular beam epitaxy;Dimakis;J. Appl. Phys.,2005

3. Effects of film polarities on InN growth by molecular-beam epitaxy;Xu;Appl. Phys. Lett.,2003

4. Growth optimization of an electron confining InN/GaN quantum well heterostructure;Dimakis;J. Electron. Mater.,2007

5. Role of sapphire nitridation temperature on GaN growth by plasma assisted molecular beam epitaxy: part I. Impact of the nitridation chemistry on material characteristics;Namkoong;J. Appl. Phys.,2002

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Development of in situ characterization techniques in molecular beam epitaxy;Journal of Semiconductors;2024-03-01

2. The synthesis and formation mechanism of nonpolar InN nanoplates;CrystEngComm;2021

3. Low-RF-power growth of InN thin films by plasma-assisted reactive evaporation with a localized ion source;Materials Chemistry and Physics;2017-09

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