Extremely smooth surface morphology of GaN-based layers on misoriented GaN substrates for high-power blue-violet lasers
Author:
Publisher
Wiley
Subject
Condensed Matter Physics
Reference8 articles.
1. High-Power and Long-Lifetime InGaN Multi-Quantum-Well Laser Diodes Grown on Low-Dislocation-Density GaN Substrates
2. Preparation of Large Freestanding GaN Substrates by Hydride Vapor Phase Epitaxy Using GaAs as a Starting Substrate
3. Active mode-locking of an Yb:Er fibre laser
4. MOVPE growth of GaN on a misoriented sapphire substrate
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1. GaN-Based Blue and Green Laser Diodes;Handbook of Solid-State Lighting and LEDs;2017-06-07
2. Surface morphology and optical properties of InGaN/GaN multiple quantum wells grown on freestanding GaN (0001) substrates;Superlattices and Microstructures;2016-12
3. Influence of substrate surface defects on the homoepitaxial growth of GaN (0001) by metalorganic vapor phase epitaxy;Journal of Crystal Growth;2015-04
4. Hillock formation and suppression on c-plane homoepitaxial GaN Layers grown by metalorganic vapor phase epitaxy;Journal of Crystal Growth;2013-05
5. Microstructure of epitaxial GaN films grown on chemomechanically polished GaN(0001) substrates;Journal of Crystal Growth;2012-05
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