Initial stages of SiC crystal growth by PVT method
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Reference11 articles.
1. Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review
2. Near-thermal equilibrium growth of SiC by physical vapor transport
3. The Spatial Distribution of Defects and Its Dependence on Seed Polarity and Off-Orientation during Growth of 4H-SiC Single Crystals
4. Nucleation of threading dislocations in sublimation grown silicon carbide
5. The Influence of SiC Powder Source on 6H-SiC Single Crystals Grown by the Sublimation Method
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1. Investigation of the Nucleation Process during the Initial Stage of PVT Growth of 4H-SiC;Solid State Phenomena;2023-05-30
2. Unveiling the main factors triggering the coagulation at the SiC‐blood interface;Journal of Biomedical Materials Research Part A;2023-03-16
3. Seed surface orientation dependence of the defect formation at the initial stage of physical vapor transport growth of 4H-SiC crystals;Journal of Crystal Growth;2022-11
4. Sticking coefficient and Si/C ratio of silicon carbide growth species on reconstructed 4H−SiC(0001‾) surface by ab-initio calculations;Vacuum;2022-11
5. Impact of Mechanical Stress and Nitrogen Doping on the Defect Distribution in the Initial Stage of the 4H-SiC PVT Growth Process;Materials;2022-03-03
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