Abstract
We examined the influence of thermal treatment of high-purity SiC powder on 6H-SiC
crystal growth. The doping concentration was decreased by increasing either thermal treatment
temperature or time. It was also found that the defects such as micropipes and planar cavities were
generated under relatively long treatment time (13 hours), because SiC powders were significantly
graphitized. A 6H-SiC crystal grown by using SiC source treated at 2100oC for 6 hours revealed the
best result with relatively low micropipes. For the effects of thermal treated sources on the
improvement of crystallinity, it could be explained that both the amount of alpha phase transformed
from high-purity beta-SiC powder and the elimination of porous powders in SiC powder had an
influence on the removal of silicon droplets, resulting in higher Si vapor pressure at the initial growth
stage.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference13 articles.
1. D. Hobgood, M. Brady, W. Brixius, G. Fechko, R. Glass, D. Henshall, J. Jenny, R. Leonard, D. Malta, St. G. Müller, V. Tsvetkov and C. Carter, Jr.: Mater. Sci. Forum Vols. 338-342 (2000), p.3.
2. S. Wang, A. Powell, J. Redwing, E. Piner and A. W. Saxler: Mater. Sci. Forum Vols. 338-342 (2000), p.17.
3. D.W. Snyder, V.D. Heydemann, W.J. Everson and D.L. Barrett: Mater. Sci. Forum Vols. 338-342 (2000), p.9.
4. R.R. Ciechonski, M. Syväjärvi, J. ul-Hassan, and R. Yakimova: J. Crystal Growth Vol. 275 (2004), p.462.
5. V. D. Heydemann, N. Schulze, D. L. Barrett, and G. Pensl: Appl. Phys. Lett Vol. 69 (1996), p.3728.
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献