Gate Capacitance-Dependent Field-Effect Mobility in Solution-Processed Oxide Semiconductor Thin-Film Transistors-Reference-Cited by-同舟云学术

Gate Capacitance-Dependent Field-Effect Mobility in Solution-Processed Oxide Semiconductor Thin-Film Transistors

Published:2014-04-24 Issue:29 Volume:24 Page:4689-4697
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Lee Eungkyu¹,Ko Jieun¹,Lim Keon-Hee¹,Kim Kyongjun¹,Park Si Yun¹,Myoung Jae M.²,Kim Youn Sang¹³

Affiliation:

1. Program in Nano Science and Technology; Graduate School of Convergence, Science and Technology; Seoul National University; Seoul 151-744 Republic of Korea

2. Department of Materials Science and Engineering; Yonsei University; Seoul 120-749 Republic of Korea

3. Advanced Institute of Convergence Technology; 864-1 Iui-dong Yeongtong-guSuwon-si, Gyeonggi-do 443-720 Republic of Korea

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/adfm.201400588/fullpdf

Reference33 articles.

1. Macroelectronics: Perspectives on Technology and Applications

2. Low-temperature fabrication of high-performance metal oxide thin-film electronics via combustion processing

3. Low-temperature, high-performance solution-processed metal oxide thin-film transistors formed by a ‘sol–gel on chip’ process

4. Flexible metal-oxide devices made by room-temperature photochemical activation of sol–gel films

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