Low-Cost Fabrication and Electrical Properties of IZO Thin Film Transistors
Author:
Affiliation:
1. Guilin University of Electronic Technology,Guangxi Key Laboratory of Precision Navigation Technology and Application,Guilin,China,541004
Funder
Guangxi Science and Technology Planning Project
National Natural Science Foundation of China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10426787/10426807/10427437.pdf?arnumber=10427437
Reference16 articles.
1. Gate Capacitance-Dependent Field-Effect Mobility in Solution-Processed Oxide Semiconductor Thin-Film Transistors
2. Solution processed In2O3/IGO heterojunction thin film transistors with high carrier concentration
3. Low-temperature fabrication of high-performance metal oxide thin-film electronics via combustion processing
4. Low-Temperature Aqueous Route Processed Indium Oxide Thin-Film Transistors by NH3 Plasma-Assisted Treatment
5. Recent Advances of Solution-Processed Heterojunction Oxide Thin-Film Transistors
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